Fig. 6

DIDS enhances VSD and decreases IOS transients. (Left) Representative VSD signal amplitude maps under control condition and 200 μM DIDS application. Transparent lines indicate the pyramidal cell layers (CA1 and CA3) and the granular cell layer of the DG. The positions of the stimulating and recording electrodes are marked by gray and green arrows, respectively. (Middle) Time course of the field potential responses and VSD transients on the diode at the field potential recording site under control condition and 200 μM DIDS application. (Right) Effect of 200 μM DIDS on the population spike (PS) measured in the CA1 and on the average VSD and IOS amplitudes in the CA1, CA3 and DG regions. Asterisks indicate significant changes compared to control (P < 0.05 Mann–Whitney U test)